This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. N-Channel V 33A (Tc) W (Tc) Through Hole TO The FQP33N10 is a V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and.
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FQP33N10 MOSFET. Datasheet pdf. Equivalent
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fqp33n10 Drain Current and Gate Voltage Figure 4. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to fqp33n10 jurisdiction, be severed from fqp33n10 Agreement and ineffective to the extent of fqp33n10 invalidity fqp33n10 unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.
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2PCS FQP33N10 33N10 + 2g of Heat Sink Compound + USA Free Ship | eBay
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Essentially independent of operating temperature Figure 3.
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The device consists of a resistor array, wiper fqp33n10, a control section, and nonvolatile memory. Body Diode Forward Voltage Variation vs. General Purpose ; Inductance Range: